We analyze and optimize the epitaxial growth of III-V semiconductor materials on III-V, Ge and Si substrates. We have particular expertise in growing epitaxial layer structures, specifically the metamorphic growth of semiconductor layers with different lattice constants.
We also investigate the growth process of novel compounds, such as GaInNAs.
We have two modern, industrial-scale MOVPE reactors available for manufacturing III-V compound semiconductor layers: an AIX2800 G4 TM reactor with 8 x 6 inch configuration and a CRIUS showerhead reactor for 7 x 4 inch or 1 x 300 mm substrates.
We are able to characterize epitaxially grown materials using a variety of methods. These include ECV profiling, photoluminescence, X-ray diffraction, differential interference contrast microscopy, EBIC and AFM as well as Hall van der Pauw measurements.
We primarily analyze the following material systems:
GaAs, AlGaAs, GaInP, AlGaInP, GaAsP, GaInAs, GaInNAs
GaAs, Ge, InP, Si