Medium Voltage Lab

Our 20 kV laboratory grid is fed from the 110 kV grid via our own 40 MVA transformer and thus allows tests and measurements of systems and converters without affecting third parties.

In our large-scale medium-voltage test field with direct connection to our own 20 kV grid, we can measure any medium-voltage components. Converters, transformers, etc. up to the size of a 40-foot container can be tested here. Our strength is customer specific measurements.

If you would like to carry out a special measurement and you lack the equipment or simply the connected load, please contact us.

• 100 m² area for inverter tests with separate control room
• 3-30 kV / 2,5 MVA adjustable transformer
• Direct connection to 20 kV / 20 MVA with inverter-specific transformer 
• 1 MW resistive load for three-phase 20 kV or 36 kV_DC
• UVRT and OVRT tests for inverters with up to 8 MVA nominal power possible
• High-precision power analyzers up to 36 kV_AC / 1 kA_AC

• 140 m² area with 4 test cells for medium voltage power electronics
• 1 MVA highly dynamic grid simulator
  
• 7-40 kV / 600 kW DC source
• 3-12 kV (50 Hz) / 150 kVA three-phase adjustable transformer
• 15 kV (16,7 Hz) / 200 kVA single-phase transformer 
• 36 kV / 60 kW resistive load
• 6 kV / 120 kW resistive load
• High-precision and high-frequency measurement equipment up to 30 kV / 1 MHz and 100 A / 15 MHz

• Three test setups for HV-device double pulse measurements             
  • up to 20 kV / 300 A
  • up to 6 kV / 1000 A
  • up to 2 kV / 3600 A

• Measurement with passive voltage probe and high bandwidth current transformer
  • Low parasitic capacitances of the inductor for HV-SiC-devices to handle high dv/dt up to 200 kV / µs
    
  • Temperature range 25-200 °C

• Avalanche measurements for transistors and diodes for non-repetitive single pulse avalanche energy
• Avalanche voltage up to 35 kV possible
• Specific mounting with liquid isolation possible
• Temperature range 25-200 °C

• Test setup for voltages up to 35 kV
• Resolution of current measurement <10 nA
• Measurements according DIN IEC 60747-8
• Temperature range 25-200 °C
• Devices under test can also be mounted as DCB in liquid isolation (MIDEL 7131), if a prototype package is not available

Parameter evaluation of power semiconductor prototypes under a wide range of operating conditions:

• I/V parameters (Ron, Vbreak, Leakage, Vth, Vsat,…)
• Transistor capacitances at high bias voltages  (Ciss, Coss, Crss, Cies, Coes, Cres, Rg)
• Gate charge Qg measurement
• Wide current and voltage operation range up to 1.5 kA / 3 kV 
• Thermal test capability (+25 to +250 °C)
• Data sheet characterization
• Oscilloscope View