Power Electronic Devices and Detectors

Our research is focused on Schottky diodes with high negative breakdown voltages, which are required for power electronic applications such as battery chargers and motor drives. As a substrate with high electron mobility and low series resistance, GaAs offers significant advantages over traditional materials such as silicon. In addition, high-quality GaAs substrates are available in large diameters, enabling the fabrication of efficient devices. In combination with ultrafast growth, for example we develop epitaxially grown structures for Schottky diodes with thicknesses up to 30 µm and breakdown voltages down to -400 V.

In addition, we use our expertise in III-V growth to produce other semiconductor components such as transistors or detectors.