Engineered Substrates on Indium Phosphide Basis

InP is the cornerstone of next-generation electronic and photonic device development in multiple areas including 5G and 6G telecom networks, data centers, automotive and medical applications. Although InP substrates have been the gold standard for such applications, the high cost and limited availability pose significant challenges for large-scale production.

To face this challenge, we have developed an innovative solution to produce high-quality InP layers on GaAs substrates. These so-called "InP-on-GaAs Engineered Substrates" deliver material quality as good as prime InP substrates as well as exceptional homogeneity across the wafer area_, capable of effectively replacing standard InP wafers in a wide variety of applications. InP-on-GaAs engineered substrates are available “epi-ready” (prepared for epitaxial growth) in 4’’ and 6’’ format.

This technology offers a cost-effective and less brittle alternative to InP bulk wafers, leveraging the lower material costs and established supply chain for GaAs wafers. Similar performance at a device level can be achieved at a fraction of the cost, allowing production expenses to be reduced without significantly compromising on quality.