Semiconductor components are usually electrically interconnected. Depending on the industry, different joining technologies are used. These range from classic soldering of special connectors to wire bonding and conductive bonding. The quality of the joints is often decisive for the service life of the final product, which is usually exposed to operational thermal and mechanical stresses.
Laser processes are now established in many ways in the world of joining and offer a number of fundamental advantages. Lasers work without contact, with very low, excellently controllable heat input that can be localized as required. Dissimilar joining partners can be joined without the use of additional materials such as solder or flux, making the technology particularly sustainable and cost-effective. The precise and fast control of laser processes, especially in combination with an in-situ diagnostic procedure, makes it possible to compensate for production-related material fluctuations and thus produce joints of consistent quality.
Together with our project partners, we have been working since 2007 on laser-based micro-joining processes for bonding ultra-thin aluminum foil to different surfaces and materials. As part of these research activities, a whole “toolbox” of different joining processes has been developed and tested. This includes bonding processes on ceramics for the metallization of semiconductor wafers or other components. We are also developing micro-welding processes for bonding the foils to conductor tracks made of silver, aluminum, or copper that are only a few micrometers thick. These processes are generally used for electrical interconnection, for example in solar cells, batteries, or power electronics components.