Silicon Material and Semiconductor Substrates

In the research topic "Silicon Materials and Semiconductor Substrates", we have extensive expertise in technologies, systems and processes for chemical vapor deposition from chlorosilanes (Si, SiC and Ge). Our goal is to provide high-quality and sustainable silicon and germanium wafers with a very low CO2 footprint.

The focus of our research and development work is on epitaxially grown wafers (EpiWafers) and reusable growth templates. In addition to gas phase deposition, the electrochemical etching of a porous layer stack and its reorganization are central processes that enable the EpiWafer to be detached. In addition, the production of the EpiWafers includes the cost-effective preparation of the mother substrate (epi-ready) and the lift-off process. The refinement of reactor parts with SiC layers and the efficient use of process gases are further important competencies for the successful implementation of the EpiWafer concept.  

In close cooperation with wafer and equipment manufacturers, we test innovative processes for their basic functionality and develop them further in the direction of high throughput and low manufacturing costs. Our work has resulted in numerous patents that are available for licensing.

• Epitaxial Silicon Wafers and Films
• Reusable and Customized Templates for Crystalline Growth