Press Release #09 / 2013
Fraunhofer ISE Teams up with EV GROUP to Enable Direct Semiconductor Wafer Bonds for Next-Generation Solar Cells

The Fraunhofer Institute for Solar Energy Systems ISE today announced that it has joined forces with EV Group (EVG) to develop equipment and process technology to enable electrically conductive and optically transparent direct wafer bonds at room temperature. The new solutions, developed in partnership with Fraunhofer ISE based on EVG’s recently announced ComBond® technology, aim to enable highly mismatched material combinations like gallium arsenide (GaAs) on silicon, GaAs on indium phosphide (InP), InP on germanium (Ge) and GaAs on gallium antimonide (GaSb). Direct wafer bonding provides the ability to combine a variety of materials with optimal properties for integration into multi-junction solar cells, which can lead to new device architectures with unparalleled performance.
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