News #14 / 2025
InP-on-GaAs substrates can replace prime indium phosphide wafers

Together with the company III/V-Reclaim, scientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in producing high-quality indium phosphide on gallium arsenide substrates (InP-on-GaAs wafers) with up to 150 mm diameter. These new wafers can effectively replace classic indium phosphide in a variety of applications, offering a scalable pathway to lower cost. The research team developed a process to deposit a thin layer of high-quality InP on GaAs. Following a special surface treatment, these wafers are delivered epi-ready, enabling customers to directly grow III-V epitaxial structures and manufacture high-performance InP-based semiconductor devices.
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