Static and dynamic characterization of new SiC and GaN semiconductors

Tests in the voltage range 100V - 20kV

© Fraunhofer ISE

Prototype of a lateral GaN transistor.

New transistors based on silicon carbide (SiC) or gallium nitride (GaN) open up many possibilities in power electronics. Due to extremely low switching losses and low conduction losses of the components, circuits with high switching frequencies and high efficiency can be realized. Due to these high switching frequencies, the expenditure for the passive components, in particular the size of choke coils, can be significantly reduced.

Compared to solutions with silicon (Si) components, the high switching frequencies and the smaller inductive components enable significantly more compact and cost-effective solutions at system level. With SiC transistors, the switching frequencies can be increased by a factor of three to five compared to Si transistors. Even higher switching frequencies can be realized with GaN semiconductors. They are suitable for the construction of power converters of lower power with switching frequencies in the MHz range.

 

Our R&D services include:

  • Hardware development of transformerless circuits
  • Development of resonant circuits with galvanic isolation