Gallium Nitride Transistors Make High-Frequency Power Electronics More Efficient and Compact – Applications Seen in Aeronautics and Communications Electronics
Highly modern power transistors based on gallium nitride (GaN) enable power electronic switches to operate at much higher switching frequencies compared to those based on silicon (Si). An increased power density per volume and per weight, reduced costs, less material use and, in the case of a mobile system, increased system efficiency are among the advantages. Solutions and concepts for high-frequency power electronics of the future shall be developed in the collaborative project “GaN-resonant – Efficient, highly compact high frequency power electronics with GaN transistors”, which is sponsored by the German Federal Ministry for Education and Research (BMBF). “GaN-resonant“ was launched on July 1, 2013 and will be funded with around 1.2 million euro over the next three years by the German Federal Ministry for Education and Research (BMBF) in the context of its funding announcement “Leistungselektronik zur Energieeffizienzsteigerung (Power Electronics for Increasing Energy Efficiency)“.